The growth and characterization of AlGaAs double heterostructures for the evaluation of reactor and source quality |
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Authors: | M R Islam R V Chelakaea J G Neff K G Fertitta P A Grudowski A L Holmes F J Ciuba R D Dupuis J E Fouquet |
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Affiliation: | (1) Microelectronics Research Center, MER 1.606D-R9900, The University of Texas at Austin, 78712-1100 Austin, TX;(2) Hewlett-Packard Laboratories, 3500 Deer Creek Road, 94303-0867 Palo Alto, CA |
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Abstract: | AlGaAs double heterostructures are grown by low-pressure metalorganic chemical vapor deposition to evaluate the level of oxygen
contamination in different trimethylaluminum sources. Effects of arsine purifiers, misoriented substrates, atmospheric exposure
of the growth chamber, and possible phosphorus contamination are also studied. Extensive characterization is performed on
these films by a variety of methods, including high-resolution x-ray diffraction, photoluminescence (PL), time-resolved photoluminescence,
and secondary-ion mass spectrometry. The PL intensities for structures grown with the low-alkoxide grade are reproducibly
much greater than those grown with the regular-grade TMA1. The use of AsH3 purification improves the PL intensity. |
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Keywords: | AlGaAs metalorganic chemical vapor deposition (MOCVD) nonradiative centers oxygen recombination |
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