CdTe as a passivating layer in CdTe/HgCdTe heterostructures |
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| Authors: | I. S. Virt I. V. Kurilo I. A. Rudyĭ F. F. Sizov N. N. Mikhaĭlov R. N. Smirnov |
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| Affiliation: | (1) Drogobych State Pedagogical University, ul. I. Franko 24, Drogobych, 82100, Ukraine;(2) Lviv Polytechnic National University, ul. Bandery 12, Lviv, 79013, Ukraine;(3) Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, Kiev, 03028, Ukraine;(4) Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. akademika Lavrent’eva 13, Novosibirsk, 630090, Russia |
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| Abstract: | CdTe/Hg1 ? x Cd x Te heterostructures are studied. In the structures, CdTe is used as a passivating layer deposited as a polycrystal or single crystal on a single-crystal Hg1 ? x Cd x Te film. The film and a passivating layer were obtained in a single technological process of molecular beam epitaxy. The structure of passivating layers was studied by reflection high-energy electron diffraction, and the effect of the structure of the passivating layer on the properties of the active layer was studied by X-ray diffractometry. Mechanical properties of heterostructures were studied by the microhardness method. Electrical and photoelectrical parameters of the Hg1 ? x Cd x Te films are reported. |
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