| Abstract: | In this paper, a new emitter-sharpened double-gate race-track-shaped field emitter structure is reported. The race-track-shaped edge emission with double-gate control is used to provide high uniformity FEAs over a large area without the need of expensive submicron technology. In order to minimize the gate current, which is detrimental to the field emitter performance, an emitter-sharpened structure is used. Experimental results show that the turn-on voltage of the emitter-sharpened double-gate structure is 45 V, which is 60% smaller than that of the single-gate structure (110 V). Furthermore, the gate current of the emitter-sharpened double-gate structure is 7 times and 15 times smaller than that of the nonemitter-sharpened double-gate structure and the single-gate structure, respectively |
