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Al_(0.35)Ga_(0.65)As中DX中心的俘获激活能(英文)
引用本文:吴征,汪乐. Al_(0.35)Ga_(0.65)As中DX中心的俘获激活能(英文)[J]. 固体电子学研究与进展, 1989, 0(4)
作者姓名:吴征  汪乐
作者单位:中国科学院上海冶金研究所(吴征),中国科学院上海冶金研究所(汪乐)
摘    要:


Capture Activation Energy of DX Centers in Al_(0.35)Ga_(0.65)As
Abstract:The capture, spectra in LPE-Ga0.35Al0.65As were studied. Two peaks of DX center is the capture spectra were obtained by a pulse with suitable duration, although there was one peak only in the emission spectra. It was possible thnt there were two deep levels about the different captures cross section and mar the emission rate. The unusual results of an emission activation energy of 0.31eV and a capture activation energy of 0.42eV were determined in the sample with NDX/Ns-1.7. Nonexponential single shot transient capacitance curves were imitated theoretically by using emission and capture equations for the high concentration of deep levels and by considering spreading factor of DX centers. Experimental curves were consistent with theoretical curves. The spreading factor of barrier was 40meV. Emission and capture activation energy were determined to be 0.3leV and 0.18eV, respectively.
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