X-ray diffraction and high resolution transmission electron microscopy of 3C-SiC/AlN/6H-SiC(0001) |
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Authors: | J H Edgar Z J Yu David J Smith J Chaudhuri X Cheng |
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Affiliation: | (1) Department of Chemical Engineering, Durland Hall, Kansas State University, 66506-5102 Manhattan, KS;(2) Department of Physics and Astronomy and Center for Solid State Science, Arizona State University, 85287-1704 Tempe, AZ;(3) Mechanical Engineering Department, Wichita State University, 67260-0035 Wichita, KS |
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Abstract: | The structure and crystal quality of epitaxial films of SiC/AlN/6H-SiC(0001) prepared by chemical vapor deposition were evaluated
by high resolution transmission electron microscopy (HRTEM) and x-ray diffraction techniques. Cross-sectional HRTEM revealed
an abrupt AlN layer-6H-SiC substrate junction, but the transition between the AlN and SiC layers was much rougher, leading
to the formation of a highly disordered SiC region adjacent to the interface. The AlN layer was relatively defect free, while
the SiC layer contained many microtwins and stacking faults originating at the top SiC/AlN interface. The SiC layer was the
3C-polytype, as determined by double crystal x-ray rocking curves. The SiC layers were under in-plane compressive stress,
with calculated defect density between 2–4×107 defects/cm−2. |
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Keywords: | Chemical vapor deposition (CVD) high resolution transmission electron microscopy (HRTEM) SiC/AlN |
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