| 今日SiC电子学 |
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| 引用本文： | 党冀萍. 今日SiC电子学[J]. 微纳电子技术, 1999, 0(2) |
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| 作者姓名： | 党冀萍 |
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| 作者单位： | 河北半导体研究所 |
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| 摘 要： | ＳｉＣ是近几年迅速发展的一种半导体材料，在微波功率器件、功率电子开关器件、高温工作器件等方面比Ｓｉ和ＧａＡｓ具有更大的优势。本文介绍了ＳｉＣ材料特性、材料制备及目前器件研制水平。
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| 关 键 词： | 碳化硅 微波功率器件 功率器件 |
SiC Electronics for Today |
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| Dang Jiping. SiC Electronics for Today[J]. Micronanoelectronic Technology, 1999, 0(2) |
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| Authors: | Dang Jiping |
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| Abstract: | Silicon carbide is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the areas of microwave power devices,power electronic switching devices,high temperature device.This paper presents an overview of SiC electronic properties,current status of the bulk and epitaxial material growth and characteristics of the recently fabricated devices in microwave power and power electronics. |
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| Keywords: | SiC Microwave power device Power device |
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