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Properties of Heavily Mn-doped GaMnAs with Curie Temperature of 172.5 K |
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| Authors: | Kenichi Ohno Shinobu Ohya Masaaki Tanaka |
| Affiliation: | (1) Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;(2) Present address: Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;(3) PRESTO Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan |
| Abstract: | The authors have investigated the magnetic properties of heavily Mn-doped ferromagnetic semiconductor Ga1−x Mn x As thin film with the Mn concentration x of 15.2% grown by molecular-beam epitaxy at relatively high growth temperature of 250 °C. Magnetic circular dichroism and the anomalous Hall effect measurements indicate that this thin film holds the intrinsic ferromagnetic semiconductor features. By low-temperature annealing, the resistivity was significantly decreased and the Curie temperature was largely enhanced from 95 K to 172.5 K. |
| Keywords: | GaMnAs Ferromagnetic semiconductor Magneto-optical properties Spin transport Spintronics |
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