| Investigation of EL2 Defect in 10 MeV Electron Irradiated Undoped Semi－insulating LEC GaAs |
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| 引用本文： | 吴凤美,施毅,陈武鸣,吴红卫,赖启基,赵周英. Investigation of EL2 Defect in 10 MeV Electron Irradiated Undoped Semi－insulating LEC GaAs[J]. 稀有金属(英文版), 1995, 0(4) |
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| 作者姓名： | 吴凤美 施毅 陈武鸣 吴红卫 赖启基 赵周英 |
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| 作者单位： | Wu Fengmei;Shi Yi;Chen Wuming;Wu Hongwei and Lai Qiji(Department of Physics，Nanjing University，Najinh 210093，china)Zhao Zhouying(Nanjing Electronic Devices Institute，Nanjing 210016，China) |
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| 摘 要： | ＩｎｖｅｓｔｉｇａｔｉｏｎｏｆＥＬ２Ｄｅｆｅｃｔｉｎ１０ＭｅＶＥｌｅｃｔｒｏｎＩｒｒａｄｉａｔｅｄＵｎｄｏｐｅｄＳｅｍｉ－ｉｎｓｕｌａｔｉｎｇＬＥＣＧａＡｓＷｕＦｅｎｇｍｅｉ，ＳｈｉＹｉ，ＣｈｅｎＷｕｍｉｎｇ，ＷｕＨｏｎｇｗｅｉａｎｄＬａｉＱｉｊｉ（...
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Investigation of EL2 Defect in 10 MeV Electron Irradiated UndopedSemi insulating LEC GaAs |
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| Wu Fengmei,Shi Yi,Chen Wuming,Wu Hongwei and Lai Qiji. Investigation of EL2 Defect in 10 MeV Electron Irradiated UndopedSemi insulating LEC GaAs[J]. Rare Metals, 1995, 0(4) |
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| Authors: | Wu Fengmei Shi Yi Chen Wuming Wu Hongwei Lai Qiji |
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| Abstract: | The induces defects and especially the EL2 defect in 10 MeV electron irradiated undoped semi-insulating(SI) LEC GaAs samples were investigated by using optical transient current spectroscopy (OTCS)technique.The results indicate that the density of EL2 defect of irradiated GaAs decreases and the density of EL6 defect in-creases at lower fluence levels. At higher fluences, we observe an increase in density of the EL2 level, howev-er,the density of the EL6 is decreased. It is suggested that on lower fluences, 10 MeV electron irradiation causes the dissociation of the EL2 defect, and may be used to decrease the main donor level EL2 in SI-GaAs. |
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| Keywords: | Undoped SI-GaAs EL2 OTCS technique 10 MeV electron irra-diation |
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