| 用二维全带组合Monte Carlo方法模拟纤锌矿相GaN静电感应晶体管(SIT)特性 |
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| 引用本文： | 郭宝增,孙荣霞.用二维全带组合Monte Carlo方法模拟纤锌矿相GaN静电感应晶体管(SIT)特性[J].电子学报,2003,31(8):1211-1214. |
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| 作者姓名： | 郭宝增 孙荣霞 |
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| 作者单位： | 1. 河北大学电子信息工程学院,河北保定 071002;2. Beckman Institute,University of Illinois at Urbana-Champaign,405 North Mathews Urbana,IL, USA 61801 |
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| 基金项目： | 国家留学基金 (No.9881 30 54) |
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| 摘 要： | 报告了用二维全带组合Monte Carlo方法模拟纤锌矿相GaN静电感应晶体管(SITs)交直流特性的结果.SIT的栅极长度为0.13μm,源极和漏极之间距离为0.5μm.模拟得到了SIT的输出特性,跨导和特征频率特性.模拟得到的跨导最大值为140ms/mm(Vgs=-1.5V),器件特征频率最大值为123GHz(Ids=3.15A/cm).模拟结果表明纤锌矿相GaN SIT具有大功率和高频工作的潜力.
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| 关 键 词： | Monte Carlo 模拟 氮化镓 静电感应晶体管 化合物半导体 |
| 文章编号： | 0372-2112(2003)08-1121-04 |
| 收稿时间： | 2002-02-19 |
Two Dimensional Full Band,Ensemble Monte Carlo Simulation of Wutzite GaN Static Induction Transistors (SITs) |
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| Umberto Ravaioli.Two Dimensional Full Band,Ensemble Monte Carlo Simulation of Wutzite GaN Static Induction Transistors (SITs)[J].Acta Electronica Sinica,2003,31(8):1211-1214. |
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| Authors: | Umberto Ravaioli |
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| Affiliation: | 1. College of Electronic and Informational Engineering,Hebei University,Baoding,Hebei 071002 China;2. Beckman Institute,University of Illinois at Urbana-Champaign,405 North Mathews Urbana,IL,USA 61801 |
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| Abstract: | We present the calculated results of DC and AC characteristics of wurtzite GaN static induction transistor by two dimensional full band,ensemble Monte Carlo simulations.The gate length of SIT is 0.13 micron and the distance between source and drain is 0.5 micron.We obtained the output characteristics,transconductance and current cutoff frequency characteristics of SIT by the Monte Carlo simulations.The maximum transconductance is 140 mS/mm at a gate source voltage of -1.5V,and the maximum current cutoff frequency is 123 GHZ at a drain source current of 3.15A/cm.The calculated results indicates that wurtzite GaN SITs have a potential for applications in high power and high frequency. |
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| Keywords: | monte carlo simulation GaN static induction transistor compound semiconductor |
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