| GaAs／GaAlAs低阈值垂直腔面发射激光器 |
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| 引用本文： | 林世鸣 王启明. GaAs／GaAlAs低阈值垂直腔面发射激光器[J]. 高技术通讯, 1994, 4(10): 11-13 |
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| 作者姓名： | 林世鸣 王启明 |
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| 作者单位： | 中国科学院半导体所集成光电子学国家重点实验室 |
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| 摘 要： | 通过对增益波导型ＧａＡｓ／ＧａＡｌＡｓ垂直腔面发射激光器的材料生长和工艺制作的研究，实现了在室温下的脉冲激射。其激射阈值电流低达１０ｍＡ，输出光功率不低于０．３ｍｗ，有的可达０．７ｍｗ以上，器件单横模、单纵模工作，线宽小于４人。
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| 关 键 词： | 垂直腔面发射 激光器 量子阱 结构 分子束外延 |
GaAs/GaAlAs Vertical Cavity Surface Emitting Lasers with Low Threshold Current |
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| Lin Shiming,Wu Ronghan,Huang Yongzhen,Pan Zhong,Gao Honghai,Wang Qiming,Duan Hailong,Gao Wenzhi,Luo Liping,Wang Lixuan. GaAs/GaAlAs Vertical Cavity Surface Emitting Lasers with Low Threshold Current[J]. High Technology Letters, 1994, 4(10): 11-13 |
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| Authors: | Lin Shiming Wu Ronghan Huang Yongzhen Pan Zhong Gao Honghai Wang Qiming Duan Hailong Gao Wenzhi Luo Liping Wang Lixuan |
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| Abstract: | By the study of material growth and device processing,the GaAs/GaAlAs vertical cavity sur faceemitting laser has been fabricated.It's lowest threshold current under pulse condition at room temperatureis 10mA,with light output higher than 0.7mw. It works at single- transverce and single-longetudinalmodes.The emission line width is no wider than 4A.(The measurement is limited by the instrument. |
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| Keywords: | Vertical cavity surface emitting laser Quantum well structure Mofecular beam epitaxy |
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