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Recent trends in graphene materials synthesized by CVD with various carbon precursors
Authors:" target="_blank">Muhammad Izhar Kairi  " target="_blank">Mehrnoush Khavarian  " target="_blank">Suriani Abu Bakar  Brigitte Vigolo  " target="_blank">Abdul Rahman Mohamed
Affiliation:1.School of Chemical Engineering, Engineering Campus,Universiti Sains Malaysia,Nibong Tebal, Seberang Perai Selatan,Malaysia;2.Nanotechnology Research Centre, Faculty of Science and Mathematics,Universiti Pendidikan Sultan Idris,Tanjung Malim,Malaysia;3.Institut Jean Lamour,CNRS-Université de Lorraine,Vandceuvre-lés-Nancy,France
Abstract:Graphene is a single layer of carbon atoms arranged in an sp2-hybridized structure with properties far superior compared to other materials. Research and development in graphene synthesis have been rapidly growing the past few years, especially using chemical vapor deposition (CVD) over various types of carbon precursor. The nature and the type of carbon precursor is one important parameter of growth by CVD, especially for graphene production, since they can dramatically impact graphene growth yield and rate. However, effects of the used carbon precursor on graphene growth mechanisms are rarely discussed. In the course of large-scale and low-cost graphene preparation, this review on the recent trends regarding the utilization of diverse carbon precursors used to synthesize graphene via the CVD method is of great interest for development of improved or alternative synthesis methods. The details and the mechanisms involved in graphene synthesis using carbon precursors in the form of gaseous, liquids and solids are compared, analyzed and discussed thoroughly. In this review, we present a thorough overview on the impact and mechanisms of carbon precursors in achieving high-quality graphene with competitive edge in the near future.
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