| 掺氮氟非晶碳膜场发射电流重复性及F-N曲线研究 |
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| 引用本文： | 刘雄飞,徐根,李伯勋.掺氮氟非晶碳膜场发射电流重复性及F-N曲线研究[J].郑州大学学报(工学版),2010,31(1). |
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| 作者姓名： | 刘雄飞 徐根 李伯勋 |
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| 作者单位： | 中南大学物理科学与技术学院,湖南,长沙,410083 |
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| 摘 要： | 采用射频等离子体化学增强型气相沉积(rF-PECVD)法沉积了掺氮氟化非晶碳膜.研究了不同射频功率下薄膜样品表面形貌及I-U特性,比较了试样I-U曲线的对称性及零点漂移;分析了直接沉积及硅陈列沉积下膜场发射电流的重复稳定性的差异;研究了不同掺氮流量比下沉积薄膜的Fower-Nord-heim曲线.研究结果表明,氮氟化非晶碳膜是良好的冷阴极发射材料.射频功率的提升,有利于薄膜质量和性能改善;硅陈列沉积FN-DLC膜场测试的场发射电流的重复性能较直接沉积的更加稳定优良;F-N曲线基本为直线,掺氮氟化非晶碳膜的场发射为冷阴极发射,逸出功随着含氮量的升高而增大.
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| 关 键 词： | 掺氮氟化非晶碳膜 表面结构 F-N曲线 重复性 |
Study on Field Emission Current Repeatability and F-N Curves of Nitrogen Doped Fluorinated Carbon Films |
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| LIU Xiong-fei
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XU Gen
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LI Bo-xun.Study on Field Emission Current Repeatability and F-N Curves of Nitrogen Doped Fluorinated Carbon Films[J].Journal of Zhengzhou University: Eng Sci,2010,31(1). |
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| Authors: | LIU Xiong-fei XU Gen LI Bo-xun |
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| Affiliation: | LIU Xiong-fei,XU Gen,LI Bo-xun(School of Physics Science , Technology,Central South University,Changsha 410083,China) |
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| Abstract: | Nitrogen doped fluorinated carbon films were deposited by plasma enhanced chemical vapor deposition.Surface morphology and I-V characteristics of the thin film samples were studied under different RF powers.The symmetry and zero drift of the I-V characteristics of the films were compared.Repeatability and stability of the field emission current of the films deposited directly and deposited on silicon array were analyzed.Fower-Nordheim curves of the samples at different nitrogen doping were compared and rese... |
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| Keywords: | nitrogen doped fluorinated carbon film surface structure F-N curve repeatability |
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