| 磁控溅射法制备Si1−xGex/B多层薄膜及其热电性能研究 |
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| 引用本文： | 杜 鑫,苗 蕾,刘呈燕,王潇漾. 磁控溅射法制备Si1−xGex/B多层薄膜及其热电性能研究[J]. 新能源进展, 2016, 4(5): 345-350. DOI: 10.3969/j.issn.2095-560X.2016.05.002 |
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| 作者姓名： | 杜 鑫 苗 蕾 刘呈燕 王潇漾 |
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| 作者单位： | 1. 中国科学院广州能源研究所，中国科学院可再生能源重点实验室，广州 510640；2. 中国科学院大学，北京 100049；3. 桂林电子科技大学，广西 桂林 541004 |
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| 基金项目： | 国家自然科学基金（51572049，51562005）；广东省科技计划项目（2013B050800006）；中国科学院BIC对外合作项目（182344KYSB20130006） |
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| 摘 要： | 本文通过磁控溅射法制备了一种独特的SiGe/B五层结构薄膜材料，每层结构包含60 nm的Si60Ge40层和0.55 nm的B层。实验考察了薄膜材料的热电性能，结果表明：B掺杂的溅射时间最佳为30 s；当退火温度为650℃时，薄膜的致密性最好，且在此温度下具有较高的Seebeck系数，最大值为6.75 × 10−4 V/K，电阻率最小值为1.6 × 10−5 Ω•m，其功率因子最大值为0.026 W/(m?K2)。
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| 关 键 词： | 热电材料 硅锗薄膜 纳米结构 热电性能 |
| 收稿时间： | 2016-05-02 |
Thermoelectric Property of Si1−xGex/B Multilayer Thin Film Prepared by Magnetron Sputtering |
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| DU Xin,MIAO Lei,LIU Cheng-yan,WANG Xiao-yang. Thermoelectric Property of Si1−xGex/B Multilayer Thin Film Prepared by Magnetron Sputtering[J]. Advances in New and Renewable Energy, 2016, 4(5): 345-350. DOI: 10.3969/j.issn.2095-560X.2016.05.002 |
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| Authors: | DU Xin MIAO Lei LIU Cheng-yan WANG Xiao-yang |
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| Affiliation: | 1. CAS Key Laboratory of Renewable Energy, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640, China;
2. University of Chinese Academy of Sciences, Beijing 100049, China;
3. Guilin University of Electronic Technology, Guangxi Guilin 541004, China |
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| Abstract: | Unique structure (SiGe/B) based multilayer film prepared by magnetron sputtering was designed with purposes of improving electrical conductivity and Seebeck coefficient, and reducing thermal conductivity. The multilayer film contains 5 periods and each of them consisted of a 60-nm-thick Si60Ge40 layer and a 0.55-nm-thick B layer. Its thermoelectric performance was investigated and results showed that the best doping time of B was 30 s. When the annealing temperature was 650oC, the optimized film showed greatly enhanced Seebeck coefficient up to 6.75 × 10−4 V/K with decreased electrical resistivity of 1.6×10−5 Ω•m, and the maximum power factor was 0.026 W/m•K2. |
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| Keywords: | thermoelectric material SiGe thin film nanostructure thermoelectric performance |
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