Electromigration study of SNS ramp edge Josephson junctions |
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Affiliation: | 1. Cornell University, Ithaca, NY 14853, USA;2. Conductus, Sunnyvale, CA, USA |
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Abstract: | We report on the effects of electromigration of basal plane oxygen vacancies on SNS ramp edge Josephson junctions where the N-layer is YBa2Cu2.79Co0.21O7−δ, a doped version of the YBCO electrodes. Through the application of a 4–10 mA (∼2–5 MA/cm2) current bias at room temperature, the basal plane oxygen order and content in the N and S layers were improved. This is demonstrated by an increase in IcRn from <5 μV, to as much as 205 μV. The implications of these results on SNS junction fabrication, and the nature of tunneling in such devices are discussed. |
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