Electromigration study of SNS ramp edge Josephson junctions

We report on the effects of electromigration of basal plane oxygen vacancies on SNS ramp edge Josephson junctions where the N-layer is YBa₂Cu_2.79Co_0.21O_7−δ, a doped version of the YBCO electrodes. Through the application of a 4–10 mA (∼2–5 MA/cm²) current bias at room temperature, the basal plane oxygen order and content in the N and S layers were improved. This is demonstrated by an increase in I_cR_n from <5 μV, to as much as 205 μV. The implications of these results on SNS junction fabrication, and the nature of tunneling in such devices are discussed.