| 采用逆导型IGBT的新型3A/600V DIP-IPM |
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| 引用本文： | K Satoh T lwagami M Honsberg E Thal. 采用逆导型IGBT的新型3A/600V DIP-IPM[J]. 电力电子技术, 2007, 41(8): 104-106 |
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| 作者姓名： | K Satoh T lwagami M Honsberg E Thal |
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| 作者单位： | 1. 三菱电机功率器件制作所,日本,福冈
2. 三菱电机功率器件制作所,德国 |
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| 摘 要： | 三菱电机日前已开发出一种采用新型功率硅片技术的3A/600V超小型双列直插式智能功率模块(IPM),即第4代DIP-IPM.该技术将续流二极管的硅片集成到IGBT硅片上,从而将模块内部的硅片数量减少了一半,使得IPM的可靠性更高,功率密度更大.在此,介绍了这种新技术以及3A/600V第4代DIP-IPM的设计和特性.
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| 关 键 词： | 模块 电力半导体器件/逆导型绝缘栅双极晶体管 双列直插式智能功率模块 |
| 文章编号： | 1000-100X（2007）08-0104-03 |
| 修稿时间： | 2007-06-20 |
New 3A/600V DIP-IPM with Reverse Conducting-IGBT |
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| K Satoh,T Iwagami,M Honsberg,E Thal. New 3A/600V DIP-IPM with Reverse Conducting-IGBT[J]. Power Electronics, 2007, 41(8): 104-106 |
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| Authors: | K Satoh T Iwagami M Honsberg E Thal |
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| Affiliation: | 1.Mitsubishi Electric Corporation Power Device Works, Japan ; 2.Mitsubishi Electric Europs B.V. Germany |
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| Abstract: | A super mini Dual In-line Package Intelligent Power Module(DIP-IPM Ver.4) with ratings of 3A/600V has been developed by using a new power chip technology.As this new technology which integrates FWD(Free Wheeling Diode) chip to IGBT chip in inverse parallel reduces a half of the power chip number in power module,this IPM makes reliability higher and handling power capability larger at same package size.This paper presents this new technology,the design and the characteristics of the 3A DIP-IPM Ver.4. |
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| Keywords: | module power semiconductor device/Dual In-line Package Intelligent Power Module Reverse Conduct-ing-IGBT |
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