二氧化硅的反应离子刻蚀

对电子束曝光和反应离子刻蚀(RIE)进行了研究。刻蚀使用JR-2B型溅射-刻蚀机,分别采用100W、150W、200W、250W、300W的功率,对SiO2进行了刻蚀,反应气为:CHF3,对影响刻蚀的射频功率以及压力、气体流量等工艺参数作了调整,得出了刻蚀速率与射频功率和压力之间、气体流量的关系曲线。实验结果表明:随着射频功率、压力的增大,刻蚀速率不断加快,在某一值上达到最大值。再继续增加射频功率、压力,刻蚀速率反而会下降。随着气体流量的增加,刻蚀速度不断降低。

Reactive Ion Etching of SiO2

Electron beam lithography and Reactive Ion Etching are studied. With the JR-2B, SiO2 is etched , the RF power are 100 W?150 W?200 W?250 W?300 W respectively, the reactive gas is CHF3. We adjusted the craft parameter RF power, pressure, flow of the gas which is correlated to the etching. The relation between etching rate and RF power pressure, flow of the gas is gained. The experiment shows: With the increase of RF power, pressure, the etching rate increases greatly, and gets to the maximum value at the certain point. If the RF power, pressure are continued to increase, the etching rate decrease. With the increase of flow of the gas, the etching rate decreases continually.