| Persistent Photoconductivity in n-type GaN |
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| 引用本文： | DENG Dong-mei WANG Jin-yan ZHAO De-gang WEN Zheng. Persistent Photoconductivity in n-type GaN[J]. 半导体光子学与技术, 2006, 12(2): 77-80 |
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| 作者姓名： | DENG Dong-mei WANG Jin-yan ZHAO De-gang WEN Zheng |
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| 作者单位： | [1]Institute of Microelectronics, Peking University, Beijing 100871, CHN [2]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, CHN [3]Department of Physics, Liaoning University, Shenyang 110036, CHN |
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| 摘 要： | The persistent photoconductivity（PPC） phenomena in n-type GaN Films grown by metalorganic chemical vapor deposition（MOCVD） have been studied. After using some testing and analysis methods, such as the double crystal X-ray diffraction（DCXRD）, the photolumineseence（PL） spectra, etc, it is found that the issue which influences PPC in n-type GaN is not relative to the dislocations and yellow band （YB）, and is caused by the doping level of Si most likely.
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| 关 键 词： | MOCVD GaN DCXRD 光致发光 光电导率 |
| 文章编号： | 1007-0206（2006）02-0077-04 |
| 收稿时间： | 2006-01-19 |
| 修稿时间： | 2006-02-15 |
Persistent Photoconductivity in n-type GaN |
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| DENG Dong-mei,WANG Jin-yan,ZHAO De-gang,WEN Zheng. Persistent Photoconductivity in n-type GaN[J]. Semiconductor Photonics and Technology, 2006, 12(2): 77-80 |
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| Authors: | DENG Dong-mei WANG Jin-yan ZHAO De-gang WEN Zheng |
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| Abstract: | The persistent photoconductivity(PPC) phenomena in n-type GaN Films grown by metalorganic chemical vapor deposition(MOCVD) have been studied. After using some testing and analysis methods, such as the double crystal X-ray diffraction(DCXRD), the photoluminescence(PL) spectra, etc, it is found that the issue which influences PPC in n-type GaN is not relative to the dislocations and yellow band(YB), and is caused by the doping level of Si most likely. |
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| Keywords: | MOCVD GaN DCXRD Photoluminescence |
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