High-temperature irradiation of gallium arsenide

Deep level transient spectrocopy was used to investigate the introduction of P2 and P3 centers into n-type epitaxial layers of GaAs as a result of exposure to 4-MeV electrons in the temperature range 380–550 °C. It is shown that the rate at which the centers are introduced into the layers is independent of temperature in this range. The P2 center concentration is proportional to D ^0.7, whereas for the P3 center this function is D ^0.5, where D is the electron dose. Fiz. Tekh. Poluprovodn. 31, 1234–1235 (October 1997)