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Applications of accelerator mass spectrometry to electronic materials
Authors:J M Anthony

S E Matteson  D K Marble  J L Duggan and F C Mcdaniel

D J Donahue

Affiliation:

Central Research Laboratory, Texas Instruments, Inc., Dallas, TX 75265, USA

Department of Physics and Center for Materials Characterization, University of North Texas, Denton, TX 76203, USA

Department of Physics, University of Arizona, Tucson, AZ 85721, USA

Abstract:Applications of accelerator mass spectrometry (AMS) to stable-element detection in electronic materials are being explored. Conventional AMS hardware at the University of Arizona has been used to profile shallow semiconductor structures (ion-implanted samples) and to establish minimum values of system efficiency for several ions in Si and/or GaAs. A custom instrument under development at the University of North Texas has been used to generate molecule free mass spectra which can be directly compared with secondary-ion mass spectrometry (SIMS) data. Elemental fragments associated with molecular dissociation after passage through the accelerator are shown to constitute a source of system “background” which can be removed through clever selection of charge states.
Keywords:
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