| 气体流量比对PECVD硅化钛薄膜性质的影响 |
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| 引用本文： | 严北平,周南生.气体流量比对PECVD硅化钛薄膜性质的影响[J].微电子学,1993,23(4):62-64. |
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| 作者姓名： | 严北平 周南生 |
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| 作者单位： | 西安电子科技大学 陕西西安710071
(严北平，周南生)，西安电子科技大学 陕西西安710071(于宗光) |
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| 摘 要： | 本文报道了以四氯化钛(TiCl_4)和硅烷(SiH_4)为源物质,采用等离子增强化学气相淀积工艺(PECVD)制备硅化钛薄膜的方法;着重研究了气体流量比变化对薄膜电阻率、淀积速率以及化学组成的影响,通过实验获得了制备优良硅化钛薄膜的最佳气流比条件。
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| 关 键 词： | PECVD 硅化钛薄膜 VLSI 集成电路 |
The Influence of Gas Mixture Ratio on the Properties of Titanium Silicide Films Formed by PECVD |
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| Yan Beiping,Zhou Nansheng and Yu Zongguang
Xidian University.Xi' an,Shaanxi..The Influence of Gas Mixture Ratio on the Properties of Titanium Silicide Films Formed by PECVD[J].Microelectronics,1993,23(4):62-64. |
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| Authors: | Yan Beiping Zhou Nansheng and Yu Zongguang
Xidian UniversityXi' an Shaanxi |
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| Affiliation: | Yan Beiping,Zhou Nansheng and Yu Zongguang
Xidian University.Xi' an,Shaanxi.710071 |
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| Abstract: | The preparation technique for titanium silicide films using plasma enhanced chemical vapor deposition (PECVD) with TiCl4 and SiH4 as the source species is described in the paper. The influence of the variation in gas mixture ratio on the sheet resistivity.deposition rate and chemical composition has been studied in particular. As a result of experiments, the optimal gas mixture ratio has been found,in which excellent titanium silicide films can be formed. |
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| Keywords: | PECVD Titanium silicide film Refractory metal silicides VLSI technology |
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