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Surface barrier diode based on zinc selenide with a passivating zinc oxide film |
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| Authors: | V P Makhniy V V Melnik |
| Affiliation: | (1) Chernivtsi National University, Chernivtsi, Ukraine |
| Abstract: | We propose a method of fabricating surface barrier diodes with overlapped metal junction, which provides for a significant decrease in the reverse currents and an increase in the breakdown voltage. |
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