用于喷墨打印的Ag2Se墨水的制备及表征

制备硒化银(Ag₂Se)薄膜材料对于组装微型器件至关重要, 目前大部分制备方法难以精确控制薄膜尺寸并进行图案化设计, 喷墨打印技术成为解决这一问题的有效方法, 实现其与Ag₂Se材料的组合具有重要意义。本工作通过溶剂热法制备了Ag₂Se纳米颗粒, 再与不同分散剂混合以筛选出适用于喷墨打印的稳定墨水, 进一步调节喷射参数以优化打印过程中墨滴的形态, 提高打印质量。将墨水打印至聚酰亚胺衬底上, 经热处理后制备得到Ag₂Se薄膜。使用不同手段对其物相与微结构进行表征, 并测试不同打印层数薄膜的电学性能。结果表明: 随着墨水固含量与打印层数增加, Ag₂Se薄膜的结晶度和致密度得到明显提升, 电导率也得到相应提高, 这主要源于薄膜内部Ag₂Se纳米颗粒沉积量与堆积密集程度增加。当使用固含量为5 mg·mL^-1的墨水进行打印, 打印层数为40层时, Ag₂Se薄膜的电导率达到399 S·cm^-1, 表现出较高的导电性能。本研究为制备Ag₂Se基薄膜材料与器件提供了新的方向。

Preparation and Characterization of Ag2Se-based Ink Used for Inkjet Printing

Preparation of silver selenide (Ag₂Se) based thin films is significant to the micro devices. However, most of reported methods for preparing Ag₂Se films have not achieved the accuracy control and flexible pattern design of films. Inkjet printing technology is believed to provide a valid approach to solve this problem by which combination Ag₂Se and inkjet printing technology shows high value and importance. In this work, Ag₂Se nanoparticles were synthesized by solvothermal method and then dispensed into different solvents to obtain the ink with high stability. Jetting parameters were further developed to achieve the jetting of Ag₂Se ink and optimize the morphology of droplets. Ag₂Se thin films were prepared on polyimide substrates via inkjet printing with different printing layers. As-printed films were finally annealed to increase the crystalline and density. The phase and surface morphology of Ag₂Se films were characterized and the electrical conductivity of the films was measured by using four-probe measurement. Ag₂Se films can achieve higher density and crystallinity with ink concentration and printing layers increasing, which leads to higher electrical conductivity. Improvement of structure and performance of Ag₂Se films result from the increasing deposition and stacking density of Ag₂Se nanoparticles. The electrical conductivity of inkjet-printed Ag₂Se film can reach as high as 399 S·cm^-1 at the ink concentration of 5 mg·mL^-1 and the number of printing layers of 40, which provides a new orientation to prepare Ag₂Se based films and devices.