Fe3Si nanodots epitaxially grown on Si(111) substrates using ultrathin SiO2 film technique |
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Authors: | Yoshiaki Nakamura Kenjiro FukudaShogo Amari Masakazu Ichikawa |
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Affiliation: | a Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japanb Department of Applied Physics, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan |
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Abstract: | Ultrahigh density (> 1012 cm−2) Fe3Si nanodots (NDs) are epitaxially grown on Si(111) substrates by codeposition of Fe and Si on the ultrathin SiO2 films with ultrahigh density nanovoids. We used two kinds of methods for epitaxial growth: molecular beam epitaxy (MBE) and solid phase epitaxy. For MBE, low temperature (< 300 °C) growth of the Fe3Si NDs is needed to suppress the interdiffusion between Fe atoms deposited on the surfaces and Si atoms in the substrate. These epitaxial NDs exhibited the ferromagnetism at low temperatures, which were expected in terms of the application to the magnetic memory device materials. |
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Keywords: | Nanodots Fe3Si MBE SPE Ultrathin SiO2 films |
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