Patterning characteristics under small vibrations of the mask and wafer in SR lithography |
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Authors: | M Fukuda N Koyama H Tsuyuzaki M Suzuki S Ishihara |
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Affiliation: | NTT LSI Laboratories 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01, Japan Phone +81-462-40-2220, Fax +81-462-40-4318 |
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Abstract: | Patterning characteristics under mechanical vibrations between mask and wafer are investigated in terms of pattern profile deformation, linewidth change, and exposure dose margin by performing exposure experiments and using a Fresnel diffraction simulation. A small vibration works as a smoothing filter and provides a smooth profile in patterning. Stronger vibrations, generally, make the linewidth bigger, thereby reducing the dose margin. However, given vibrations of a particular amplitude, there is a certain range of doses in which the vibrations donot significantly affect the linewidth. Below the range, the linewidth becomes smaller; and above, it becomes larger. And it is possible to obtain the desired dimensions of delineated pattern even when the amplitude of the vibrations was a quarter of the minimum feature size. |
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