The fabrication of all-diamond packaging panels with built-in interconnects for wireless integrated microsystems |
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Authors: | Xiangwei Zhu Aslam DM Yuxing Tang Stark BH Najafi K |
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Affiliation: | Michigan State Univ., East Lansing, MI, USA; |
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Abstract: | To explore polycrystalline diamond (poly-C) as a packaging material for wireless integrated microsystems (WIMS), a new fabrication technology has been developed to fabricate thick WIMS packaging panels with built-in interconnects. An ultrafast poly-C growth technique, used in this study, involves electrophoresis seeding and filling of dry-etched Si channels by undoped poly-C followed by removal of Si. A second layer of highly B-doped poly-C, which acts as a built-in interconnect, is deposited on the backside of undoped poly-C layer. The lowest resistivity values demonstrated on control samples are in the range from 0.003 to 0.31 /spl Omega/-cm. The results show that, by increasing the poly-C growth areas through the use of 2-/spl mu/m-wide Si channels, the poly-C growth time can be reduced by a factor in the range from 2.75 to 10.5 depending upon the aspect ratio of Si channels. The poly-C packaging technology, which is expected to provide new structures/concepts in MEMS/WIMS packaging, is being reported for the first time. |
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