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Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE |
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| Authors: | L B Flannery I Harrison D E Lacklison R I Dykeman T S Cheng C T Foxon |
| Affiliation: | a Department of Electrical and Electronic Engineering, University Park, Nottingham, NG7 2RD, UK b Physics Department, University of Nottingham, University Park, Nottingham, NG7 2RD, UK |
| Abstract: | We have fabricated interdigital metal-semiconductor-metal ultraviolet photoconductors using p-type GaN grown by MBE. The material had a hole concentration of 1018 cm?3 and a mobility of 5 cm2 V?1 s?1. The spectral response of the detectors has been measured and it shows a peak at 364.2 nm (3.402 eV) possibly caused by excitonic effects. The transient response of the photodetector cannot be described by a single time constant. The rise and fall times of the photoresponse are different indicating that the theory usually applied to GaN photoconductors is not valid. |
| Keywords: | Photoconductors Hole concentration Mobility GaN |
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