二维离子注入的改进模型及数值模拟

本文提出了一个改进的二维离子注入模型.对于在任意形状掩蔽边界下的离子注入分布,我们在纵向采用联结的半高斯分布或修改过的Pearson-IV分布,在横向采用余误差函数分布,并且考虑了在多层掩蔽情况下各种材料阻止本领的不同.利用这一模型发展起来的离子注入模拟器能连续计算多次不同能量、剂量和杂质类型的注入分布,并考虑了多种不同掩蔽边界的影响.通过与其它工艺模拟器的比较,表明我们的模拟器在精度和功能上都有明显的改进.

Improved Model and Numerical Simulation for Two Dimensional Ion Implantation

A new two dimensional ion implantation model is presented.The two dimensional distri-bution of the implanted impurity near an arbitrary shaped mask edge is described by a twohalf-Gaussian profile or a modified Pearson-IV distribution in the vertical direction and bya complementary error function in the lateral direction. The different stopping powers of thevarious mask materials for multi-layer mask have been considered. Using this model, an im-plantation process simulator has been developed which can continuiously calculate the impurityprofile for several times with different energy, dose and impurity. In the calculated results,the effects of the various mask edges have also been taken into account. It is shown that oursimulators both in accuracy and function are much better than the other ones.