Preparation of a Highly Conductive Al2O3/TiN Interlayer Nanocomposite through Selective Matrix Grain Growth

An electroconductive TiN/Al₂O₃ nanocomposite was prepared by a selective matrix grain growth method, using a powder mixture of submicrosized α-Al₂O₃, nanosized γ-Al₂O₃, and TiN nanoparticles synthesized through an in situ nitridation process. During sintering, a self-concentration of TiN nanoparticles at the matrix grain boundary occurred, as a result of the selective growth of large α-Al₂O₃ matrix grains. Under suitable sintering conditions, a typical interlayer nanostructure with a continuous nanosized TiN interlayer was formed along the Al₂O₃ matrix grain boundary, and the electroconducting behavior of the material was significantly improved. Twelve volume percent TiN/Al₂O₃ nanocomposite with such an interlayer nanostructure showed an unprecedentedly low resistivity of 8 × 10^?3Ω·cm, which was more than two orders lower than the TiN/Al₂O₃ nanocomposite without such an interlayer nanostructure.