A Si BiCMOS transimpedance amplifier for 10-Gb/s SONET receiver |
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| Authors: | Kim H.H. Chandrasekhar S. Burrus C.A. Jr. Bauman J. |
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| Affiliation: | Lucent Technol. Bell Labs., Holmdel, NJ; |
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| Abstract: | A transimpedance amplifier packaged with an InP p-i-n photodiode has been demonstrated for 10-Gb/s SONET receiver. The shunt feedback transimpedance amplifier is fabricated in 0.25-μm modular Si BiCMOS technology. The transimpedance of 55 dBΩ is achieved at a bandwidth of 9 GHz by applying shunt peaking and filter termination at the input. The optical sensitivity of -17 dBm was measured at 10 Gb/s for a bit-error rate of 10-12 |
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