Effects of iodine doping on optoelectronic properties of diamond-like carbon thin films deposited by microwave surface wave plasma CVD |
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Authors: | Ashraf M M Omer Sudip Adhikari Sunil Adhikary Hideo Uchida Masayoshi Umeno |
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Affiliation: | a Department of Electrical and Electronic Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan;b Department of Electronics and Information Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan |
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Abstract: | We report the effects of iodine (I) doping on the electrical and optical properties of diamond-like carbon (DLC) thin films grown on silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition at low temperature (<100 °C). For film deposition, we used argon gas with methane or camphor dissolved with ethyl alcohol composition as plasma source. The optical gap and photoconductivity measurements of the samples were carried out before and after the iodine doping. The results show that optical gap dropped from 3.4 to 0.9 eV corresponding to nondoping to iodine-doping conditions, respectively. The photovoltaic measurements show that the open-circuit voltage (Voc) and short-circuit current density (Jsc) of I-doped DLC film deposited on n-type silicon substrate under light illumination (AM1.5, 100 mW/cm2) were approximately 177 mV and 1.15 μA, respectively, and the fill factor was found to be 0.217. |
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Keywords: | Diamond-like carbon Iodine doping Microwave surface wave plasma CVD Optoelectronic properties |
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