| 基于SRL结构的抗辐射SRAM单元设计 |
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| 引用本文： | 武书肖,李磊,任磊.基于SRL结构的抗辐射SRAM单元设计[J].微电子学,2016,46(6):796-800. |
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| 作者姓名： | 武书肖 李磊 任磊 |
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| 作者单位： | 电子科技大学 电子科学与技术研究院, 成都 611731,电子科技大学 电子科学与技术研究院, 成都 611731,电子科技大学 电子科学与技术研究院, 成都 611731 |
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| 摘 要： | 在空间辐射环境中,单粒子翻转(SEU)效应严重影响了SRAM的可靠性,对航天设备的正常运行构成极大的威胁。提出了一种基于自恢复逻辑(SRL)结构的新型抗辐射SRAM单元,该单元的存储结构由3个Muller C单元和2个反相器构成,并采用读写线路分开设计。单粒子效应模拟实验结果表明,该单元不仅在静态存储状态下对SEU效应具有免疫能力,在读写过程中对SEU效应同样具有免疫能力。
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| 关 键 词： | SRAM 抗辐射 自恢复逻辑 单粒子翻转 Muller C单元 |
Design of a Radiation Hardened SRAM Cell Based on SRL Structure |
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| WU Shuxiao,LI Lei and REN Lei.Design of a Radiation Hardened SRAM Cell Based on SRL Structure[J].Microelectronics,2016,46(6):796-800. |
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| Authors: | WU Shuxiao LI Lei and REN Lei |
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| Affiliation: | Research Institute of Electronic Science and Technology, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China,Research Institute of Electronic Science and Technology, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China and Research Institute of Electronic Science and Technology, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China |
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| Abstract: | The reliability of SRAM used in the space radiation environment is seriously decreased by single event upset (SEU), which poses a great threat to the normal operation of aerospace equipment. Based on the self restoring logic (SRL) structure, a new radiation hardened SRAM cell was proposed, which storage structure was made up of three Muller C cells and two phase inverters with separate reading and writing circuits. The simulation results of single event effect showed that the proposed cell had the immunity to SEU not only under static storage, but also during the process of reading and writing. |
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| Keywords: | SRAM Radiation hardened SRL SEU Muller C element |
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