Surface mobility and distribution of electrons in the accumulation layer of Ga2Se3/GaAs heterostructures |
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| Authors: | V. F. Antyushin D. A. Vlasov I. N. Arsent’ev |
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| Affiliation: | (1) Voronezh State Technological Academy, 394017 Voronezh, Russia;(2) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
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| Abstract: | The dependence of the electron drift mobility in the undepleted conduction channels of Ga2Se3/GaAs heterostructures on the surface charge density is measured. The presence of charge coupling in the accumulation layer sufficient for creating electrical (or microelectronic) devices is discovered. Fiz. Tekh. Poluprovodn. 32, 718–720 (June 1998) |
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