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High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate |
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| Authors: | W. Yu,B. Zhang,Q.T. Zhao,J.-M. HartmannD. Buca,A. NichauR. Luptá k,J.M. LopesS. Lenk,M. LuysbergK.K. Bourdelle,X. WangS. Mantl |
| Affiliation: | a Peter Grünberg Institute 9 (PGI 9-IT), and JARA- Fundamentals of Future Intormation Technology, Forschungszentrum Juelich, 52425 Juelich, Germany b State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, Shanghai, China c Peter Grünberg Institute 5, Forschungszentrum Juelich, 52425 Juelich, Germany d CEA-LETI, MINATEC, 17 rue des Martyrs, 38054 Grenoble, France e SOITEC, Parc Technologique des Fontaines, 38190 Bernin, France |
| Abstract: | Strained SiGe quantum well p-MOSFETs with LaLuO3 higher-k dielectric were fabricated and characterized. The strained Si/strained Si0.5Ge0.5/strained SOI heterostructure transistors showed good output and transfer characteristics with an Ion/Ioff ratio of 105. The extracted hole mobility shows an enhancement of about 2.5 times over Si universal hole mobility and no degradation compared to HfO2 or even SiO2 gate dielectric devices. |
| Keywords: | High-k HfO2 LaLuO3 SiGe Hole mobility Quantum well MOSFET |
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