An avalanche photodiode with metal-insulator-semiconductor properties |
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| Authors: | Z Ya Sadygov T M Burbaev V A Kurbatov |
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| Affiliation: | (1) Joint Institute for Nuclear Research, Dubna, Moscow oblast, 141980, Russia;(2) Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 117924, Russia |
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| Abstract: | A new design of the avalanche photodetector combining the avalanche photodiode and MIS structure properties was tested. The noise and high-frequency properties of the device were studied. The device exhibited a noise factor of less than 10 at a high multiplication factor (M>1000) even with hole injection. This is indicative of a drastic change in the effective ratio of the coefficients of impact ionization by electrons and holes in favor of the latter. Measurements of the photosensitivity distribution over a photodetector area for M=8000 showed a high uniformity. |
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