| 质子注入平面掩埋条形高频DFB激光器 |
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| 引用本文： | 刘国利,张佰君,朱洪亮.质子注入平面掩埋条形高频DFB激光器[J].半导体光电,2000,21(4):245-248. |
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| 作者姓名： | 刘国利 张佰君 朱洪亮 |
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| 作者单位： | 中国科学院半导体所国家光电子工艺中心!北京100083(刘国利，张佰君，朱洪亮，张静媛，汪孝杰)，中国科学院半导 (王圩) |
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| 摘 要： | 报道了采用质子注入制作平面掩埋条形高频ＤＦＢ激光器。质子注入提高了限制层对电流的限制作用，并减小了限制层的寄生电容；ＤＦＢ激光器的斜率效率由注入前的０．１４７ｍＷ／ｍＡ提高到０．２１６ｍＷ／ｍＡ；电容测试结果表明：质子注入使ｐｎｐｎ结构的势垒电容明显减小，激光器的寄生电容由注入前的约１００ｐＦ降至注入后的６ｐＦ；激光器的３ｄＢ调制宽带由注入前的５００ＭＨｚ提高到５．６６ＧＨｚ。高温老化筛选结果表明
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| 关 键 词： | DFB激光器 质子注入 平面掩埋 半导体激光器 |
| 文章编号： | 1001-5868(2000)04-0245-04 |
| 修稿时间： | 2000年1月11日 |
High-frequency Planar Buried-heterostructure DFB Lasers Fabricated by Proton Implantation |
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| LIU Guo li,ZHANG Bai jun,ZHU Hong liang,ZHANG Jing yuan,WANG Xiao jie,WANG Wei.High-frequency Planar Buried-heterostructure DFB Lasers Fabricated by Proton Implantation[J].Semiconductor Optoelectronics,2000,21(4):245-248. |
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| Authors: | LIU Guo li ZHANG Bai jun ZHU Hong liang ZHANG Jing yuan WANG Xiao jie WANG Wei |
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| Abstract: | Proton was used to fabricate high-frequency planar pn junction buried-heterostructure DFB lasers for improving optical and electrical characteristics.The capacitance of the current blocking layer decreases from 100 pF to 6 pF,while the slope efficiency of P o- I increases from 0.147 mW/mA to 0.216 mW/mA.And 3 dB modulation bandwidth of this type lasers is improved from 500 MHz to 5.66 GHz after proton implantation.It is also proved that the proton implantation has little effect on the lifetime of the lasers. |
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| Keywords: | DFB laser proton implantation capacitance modulation bandwidth |
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