| FLOTOXEEPROM擦写过程中隧道氧化层陷阱俘获电荷的研究 |
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| 引用本文： | 于宗光,徐征,叶守银,张国华,黄卫,王万业,许居衍. FLOTOXEEPROM擦写过程中隧道氧化层陷阱俘获电荷的研究[J]. 电子学报, 2000, 28(5): 68-70 |
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| 作者姓名： | 于宗光 徐征 叶守银 张国华 黄卫 王万业 许居衍 |
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| 作者单位： | 信息产业部无锡微电子科研中心,无锡 214035 |
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| 基金项目： | 江苏省青年科技基金!(BQ960 4 0 ) |
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| 摘 要： | 本文首先从理论上分析FLOTOX EEPROM隧道氧化层中陷阱俘获电荷对注入电场和存储管阈值电压的影响,然后给出了在不同擦写条件下FLOTOX EEPROM存储管的阈值电压与擦写周期关系的实验结果,接着分析了在反复擦写过程中陷阱俘获电荷的产生现象.对于低的擦写电压,擦除阈值减少,在隧道氧化层中产生了负的陷阱俘获电荷;对于高的擦写电压,擦除阈值增加,产生了正陷阱俘获电荷.这一结果与SiO2中电荷的俘获——解俘获动态模型相吻合.
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| 关 键 词： | EEPROM 隧道氧化层 陷阱俘获电荷 耐久性 擦写 阈值电压 电场 |
| 收稿时间： | 1998-11-13 |
The Research of Trapped Charges in FLOTOX EEPROX Tunnel Oxide During Erase/Write Cycles |
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| YU Zong-guang,XU zheng,YE Shou-yin,ZHANG Guo-hua,HUANG Wei,WANG Wan-ye,XU Ju-yan. The Research of Trapped Charges in FLOTOX EEPROX Tunnel Oxide During Erase/Write Cycles[J]. Acta Electronica Sinica, 2000, 28(5): 68-70 |
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| Authors: | YU Zong-guang XU zheng YE Shou-yin ZHANG Guo-hua HUANG Wei WANG Wan-ye XU Ju-yan |
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| Affiliation: | Wuxi Microelectronics Institute,Wuxi 214035,China |
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| Abstract: | The influences of trapped charges on the oxide injection field and the threshold voltage of the FLOTOX EEPROM memory transistor are studied theoretically.The relations of the threshold voltage of the FLOTOX EEPROM to the erase/write cycles under various erased/write conditions are studied experimentally,and then the generation of the trapped charges in the repeated erase/write operations is analyzed.For the low erased/write voltages,the erased threshold decreases,so the negative trapped charges is generated; for the higher erase/write voltage ,the erased threshold increases,so the positive trapped charges is generated.The results fit in with the dynamic model of trapping detrapping in SiO 2. |
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| Keywords: | EEPROM Tunnel oxide Trapped charge Endurance Erase/Write Threshold voltage Field |
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