PVD HfO/sub 2/ for high-precision MIM capacitor applications |
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| Authors: | Sun Jung Kim Byung Jin Cho Ming Fu Li Xiongfei Yu Chunxiang Zhu Chin A Dim-Lee Kwong |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore; |
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| Abstract: | Metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO/sub 2/ with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF//spl mu/m/sup 2/ have been achieved while maintaining the leakage current densities around 1 /spl times/ 10/sup -8/ A/cm/sup 2/ within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density. |
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