~1.40 eV emission band in GaAs |
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| Authors: | Xin S.H. Wood C.E.C. DeSimone D. Palmateer S. Eastman L.F. |
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| Affiliation: | Cornell University, School of Electrical Engineering and National Research & Resource Facility for Submicron Structures, Ithaca, USA; |
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| Abstract: | Photoluminescence techniques have been used to detect and characterise the ~ 1.40 eV emission band in an Mn-doped GaAs MBE epilayer and heated semi-insulating Cr-doped GaAs. An activation energy ~ 110 ± 5 meV is obtained from the temperature quenching of the emission intensity, and evidence indicated that physical movement of the Mn atom is responsible for type conversion. |
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