Ultralow specific on resistance UMOSFET with trench contacts for source and body regions realised by selfaligned process |
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| Authors: | Matsumoto S. Ohno T. Izumi K. |
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| Affiliation: | NTT LSI Labs., Atsugi, Japan; |
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| Abstract: | An ultralow on resistance power UMOSFET having a refined contact structure has been fabricated by a selfaligned process. The most important feature of this UMOSFET is its great increment of channel width per unit area, which leads to a noticeable reduction in the on resistance. A 50 V UMOSFET with a specific on resistance of 0.58 m Omega cm/sup 2/ has been achieved despite employing a relatively thick (520 mu m) substrate with a resistivity of 8 m Omega cm.<> |
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