| 零偏压光激发瞬态电流谱及电子空穴陷阱的判断 |
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| 引用本文： | 史智盛 阎大卫. 零偏压光激发瞬态电流谱及电子空穴陷阱的判断[J]. 固体电子学研究与进展, 1989, 9(4): 386-388 |
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| 作者姓名： | 史智盛 阎大卫 |
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| 作者单位： | 中国科学院长春物理研究所(史智盛)，吉林大学电子科学系(阎大卫) |
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| 摘 要： | <正> 光激发瞬态电流谱(OTCS或PITS)已被广泛用于半绝缘半导体材料中的深能级研究,但仍存在一些待解决的问题。本文分析了Martin等提出的陷阱类型判断方法中可能存在的不确定性,提出用零偏压光激发瞬态电流谱(ZBOTCS)中峰的正、负来判断陷阱的类型,并对正峰和负峰的成因进行了讨论。实验中所用的样品是GaAs:Cr,电极为烧结(?)电极或半透金膜,光源为He-Ne激光器或经单色仪获得的单色光,信号由Boxcar采样收集。
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| 关 键 词： | 零偏压 光激发 电流谱 陷阱 |
Determination of the Type of Traps in Semi-Insulating Semiconductors with Zero Biased OTCS |
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| Abstract: | It has been shown that the type of some traps in SI semiconductors are difficult to be determined with certainty by using a normal optical transient current spectroscopy since the biased voltage may influence the occupation of the deep traps before the samples are illuminated. Zero biased OTCS(ZBOTCS) has been suggested to determine the type of traps according to the polarities of the peaks. ZBOTCS measurements for SI GaAs:Cr were carried out. The appearance of positive and negative peaks In ZBOTCS is attributed to the effect of charge exchange between the surface states and the traps with different types. |
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