| 硅中注H~+的退火行为及智能剥离SOI新材料的微结构分析 |
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| 引用本文： | 张苗 陈立凡. 硅中注H~+的退火行为及智能剥离SOI新材料的微结构分析[J]. 固体电子学研究与进展, 1998, 18(2): 181-187 |
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| 作者姓名： | 张苗 陈立凡 |
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| 作者单位： | [1]中国科学院上海冶金研究所信息功能材料国家重点实验室 [2]美国新墨西哥大学地球与行星科学 |
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| 摘 要： | 将中等剂量的H+注入到硅单晶中，并结合硅片低温键合及后续热处理形成了智能剥离SOI新材料。用热波分析技术对注H+片的剥离现象进行了无损非接触检测研究。采用剖面透射电子显微镜与高分辨率透射电子显微镜等手段对这种SOI材料的微结构进行了分析。研究表明，智能剥离SOI是一种可通过较简单的工艺获得高质量SOI材料的新途径。
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| 关 键 词： | 离子注入 智能剥离 SOI |
Annealing Behavior of H~+-implanted Si and Microstructure of Smart-cut SOI Material |
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| Zhang Miao, Lin Chenglu. Annealing Behavior of H~+-implanted Si and Microstructure of Smart-cut SOI Material[J]. Research & Progress of Solid State Electronics, 1998, 18(2): 181-187 |
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| Authors: | Zhang Miao Lin Chenglu |
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| Abstract: | New silicon on insulator (SOI) materials have been formed by Smartcut process which includes moderate dose H+ implantation, low temperature waferbonding and subsequent thermal treatment. The flaking phenomenon of H+-implanted Si sample during annealing process has been studied by thermal wave analysis technology. Cross-sectional transmission electron microscopy (XTEM) and highresolution electron microstopy (HREM) have been used to characterize the microstrhcture of the formed SOI material. The results demonstrate that Smart-cuttechnology is a good method to fabricate high quality SOI materials at lower cost. |
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| Keywords: | Ion Implantation Smart-cut Silicon on Insulator (SOI) |
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