Extremely low-noise MESFETs fabricated by metal-organic chemical vapour deposition |
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| Authors: | Kamei K Kawasaki H Chigira T Nakanisi T Kawabuchi K Yoshimi M |
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| Affiliation: | Toshiba Corporation, Electronics Equipment Division, Kawasaki, Japan; |
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| Abstract: | Quarter-micron gate low-noise GaAs MESFETs have been developed by delineating gate electrodes by an electron-beam lithography technique and by using high-purity epiwafers prepared by a metal-organic-chemical vapour deposition (MOCVD) technique. At 18 GHz, a noise figure of 1.75 dB with an associated gain of 8.5 dB and a maximum available gain of 11 dB were obtained at drain currents of 10 mA and 30 mA, respectively. This is the lowest noise figure yet reported for low-noise GaAs MESFETs. |
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