|
|||||
|
|
Bipolar model extension for MOS transistors considering gate coupling effects in the HBM ESD domain |
|
| Authors: | Heinrich Wolf Horst Gieser Wolfgang Stadler |
| Affiliation: | a Technische Universität München, Lehrstuhl für Integrierte Schaltungen (TUM/LIS/ATIS Applied Test of Integrated Systems), Arcisstr. 21, D-80290, München, Germany;b Fraunhofer-Institut Zuverlässigkeit und Mikrointegration (IZM/PCS/ATIS Analysis and Test of Integrated Systems), Hansastr. 27d, D-80686, München, Germany;c Infineon Technologies AG, DAT LIB TI, P.O. Box 800949, D-81609, München, Germany |
| Abstract: | The presented compact model for NMOS transistors combines both the high-current bipolar mode and the MOS mode considering modulation of the current gain β and gate coupling effects. For the studied 0.35 μm-CMOS devices, measurement and simulation correlate very well with respect to layout variations, fulfilling a prerequisite for the simulation guided synthesis and optimization of ESD protection structures and schemes. The open model interface also allows the use of existing proprietary MOS-models. |
| Keywords: | ESD HBM Compact simulation Protection structure Gate coupling Bipolar transistor model High current characteristic |
| 本文献已被 ScienceDirect 等数据库收录！ | |