Profiling the boron distribution in asymmetric n
+-p silicon photodiodes and a new concept for creating selectively sensitive photocells for megapixel color-image receivers |
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Authors: | I V Vanyushin V A Gergel’ V A Zimoglyad A V Lependin Yu I Tishin |
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Affiliation: | I. V. Vanyushin, V. A. Gergel’, V. A. Zimoglyad, A. V. Lependin and Yu. I. Tishin |
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Abstract: | The spectral photosensitivity of n +-p silicon photodiodes with a p + layer implanted in the substrate is studied experimentally. It is demonstrated that such p + doping effectively shifts the long-wavelength edge of the photosensitivity in the optical spectral range and the shift depends on the depth of the p + layer. A new concept for creating selectively sensitive photocells for megapixel color-image receivers is proposed. The receivers are based on n +-p photodiode structures containing a few layers that are implanted at different depths and form desired color-separating potential barriers and lateral diffusion channels for collection of the minority carriers generated by photons of different colors. |
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