| Preparation and Properties of a-Si：H Thin Films Deposited on Different Substrates |
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| 引用本文： | 饶瑞. Preparation and Properties of a-Si：H Thin Films Deposited on Different Substrates[J]. 武汉理工大学学报(材料科学英文版), 2007, 22(1): 126-128. DOI: 10.1007/s11595-005-1126-y |
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| 作者姓名： | 饶瑞 |
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| 作者单位： | Laboratories of Physics of the Interfaces and the Thin Layers Polytechnic School, 91128 Palaiseau Cedex, Paris, France |
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| 摘 要： | The effects of different substrates on the structure and hydrogen evolution from a-Si： H thin films deposited by plasma enhanced chemical vapour deposition were studied, as well as the similar films exposed to an hydrogen plasma. Spectroscopic ellipsometry and hydrogen evolution measurements were used to analyse the effects of the substrate and hydrogen plasma on the films microstructure, thickness, hydrogen content, hydrogen bonding and hydrogen evolution. The hydrogen evolution spectra show a strong substrate dependence. In particular on crystalline silicon substrate, the formation of bubbles was observed. For different substrates, hydrogen plasma treatments lightly affected the hydrogen evolution spectra. These results indicate that the action of hydrogen in a-Si：H was modified by the nature of the substrate.
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| 关 键 词： | 氢化非晶硅薄膜 衬底 沉积 制备 性质 分光光谱椭圆光度法 |
| 收稿时间： | 2005-05-28 |
| 修稿时间： | 2006-09-17 |
Preparation and properties of a-Si:H thin films deposited on different substrates |
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| Rao Rui. Preparation and properties of a-Si:H thin films deposited on different substrates[J]. Journal of Wuhan University of Technology. Materials Science Edition, 2007, 22(1): 126-128. DOI: 10.1007/s11595-005-1126-y |
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| Authors: | Rao Rui |
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| Affiliation: | (1) Laboratories of Physics of the Interfaces and the Thin Layers Polytechnic School, 91128 Palaiseau Cedex, Paris, France |
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| Abstract: | The effects of different substrates on the structure and hydrogen evolution from a-Si: H thin films deposited by plasma enhanced chemical vapour deposition were studied, as well as the simi- lar films exposed to an hydrogen plasma. Spectroscopic ellipsometry and hydrogen evolution measure- ments were used to analyse the effects of the substrate and hydrogen plasma on the films microstructure, thickness, hydrogen content, hydrogen bonding and hydrogen evolution. The hydrogen evolution spectra show a strong substrate dependence. In particular on crystalline silicon substrate, the formation of bubbles was observed. For different substrates, hydrogen plasma treatments lightly affected the hydrogen evolu- tion spectra. These results indicate that the action of hydrogen in a-Si:H was modified by the nature of the substrate. |
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| Keywords: | a-Si:H thin film substrate spectroscopic ellipsometry hydrogen evolution |
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