Photonic-crystal surface-emitting laser near 1.55 /spl mu/m on gold-coated silicon wafer |
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| Authors: | G. Vecchi F. Raineri I. Sagnes K.-H. Lee S. Guilet L. Le Gratiet F. Van Laere G. Roelkens D. Van Thourhout R. Baets A. Levenson R. Raj |
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| Affiliation: | Lab. de Photonique et de Nanostruct., CNRS, Marcoussis; |
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| Abstract: | An InP/InGaAs-based photonic band-edge laser bonded on silicon operating near 1.55 mum is presented. A gold reflector positioned below the slab containing the active layer reduces the optical losses of the Bloch-mode resonator. As a result, a quality factor exceeding 8000 is obtained at transparency leading to a laser threshold as low as 3.4 muJ/cm2 |
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