| SiGe／Si HBT及其单片微波集成电路的研究 |
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| 引用本文： | 魏欢,陈建新.SiGe／Si HBT及其单片微波集成电路的研究[J].半导体技术,2000(4):31-35. |
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| 作者姓名： | 魏欢 陈建新 |
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| 作者单位： | 北京工业大学电子工程学系，北京光电子技术实验室，北京100022 |
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| 摘 要： | ＳｉＧｅ／Ｓｉ ＨＢＴ作为单片微波集成电路中的有源元件，在截止频率，增益，噪声等方面相对于ＧａＡｓ器件有很大的优势。本文结合本单位在ＳｉＧｅ材料和器件、电路等方面做过的工作，对实现ＳｉＧｅ单片微波集成电路的一些理论和技术要点作了阐述。
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| 关 键 词： | 异质结双极晶体管 单片微波集成电路 锗化硅 |
Study of the SiGe/Si HBT and Its Monolithic Microwave IC |
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| Wei Huan,Chen Jianxin,Zou Deshu,Xu Chen,Du Jinyu ,Han Jinru,Dong Xin,Zhou Jing,Shen Guangdi.Study of the SiGe/Si HBT and Its Monolithic Microwave IC[J].Semiconductor Technology,2000(4):31-35. |
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| Authors: | Wei Huan Chen Jianxin Zou Deshu Xu Chen Du Jinyu Han Jinru Dong Xin Zhou Jing Shen Guangdi |
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| Abstract: | Being the active component in the microwave IC, the SiGe/Si HBT has greater advantages in the cutoff frequency, current gain, and noise characteristics than the GaAs devices. We have done many works in this field, and then put forward some theories and essential technologies in the fabrication of the SiGe monolithic microwave integrated circuits. |
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| Keywords: | SiGe HBT MMIC |
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