| 两种结构GaN基太阳盲紫外探测器 |
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| 引用本文： | 李雪,陈俊,何政,赵德刚,龚海梅,方家熊.两种结构GaN基太阳盲紫外探测器[J].激光与红外,2006,36(11):1040-1042. |
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| 作者姓名： | 李雪 陈俊 何政 赵德刚 龚海梅 方家熊 |
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| 作者单位： | 1. 传感技术国家重点实验室,中国科学院上海技术物理研究所,上海,200083
2. 中国科学院半导体研究所,北京,100083 |
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| 摘 要： | 分别在金属有机化学汽相沉积（MOCVD）生长的i-Al0.33Ga0.67N／AlN／n-GaN和p-Al0.45Ga0．55N／i—Al0.45Ga0.55N／n＋-Al0.65Ga0.35N的异质结构上，成功研制了太阳盲区的肖特基型和PIN型紫外探测器。研究结果表明，Au与i—Al0.33Ga0.67N形成了较好的肖特基结，响应波长从250—290nm，峰值（286nm）响应率约为0．08A／W；PIN型紫外探测器的响应波长从230～275nm，峰值（246nm）响应率约为0．02A／W。
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| 关 键 词： | 太阳盲区 肖特基 紫外探测器 |
| 文章编号： | 1001-5078（2006）11-1040-03 |
| 收稿时间： | 2006-07-25 |
| 修稿时间： | 2006-07-25 |
Solar-blind GaN-based UV Detectors with Two Structures |
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| LI Xue,CHEN Jun,HE Zheng,ZHAO De-gang,GONG Hai-mei,FANG Jia-xiong.Solar-blind GaN-based UV Detectors with Two Structures[J].Laser & Infrared,2006,36(11):1040-1042. |
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| Authors: | LI Xue CHEN Jun HE Zheng ZHAO De-gang GONG Hai-mei FANG Jia-xiong |
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| Affiliation: | 1. State Key Laboratories of Transducer Technology, Shanghai Institute of technical Physics, Chinese Academy of Sciences Shanghai 200083, China; 2. Beijing Semiconductor Institute, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | Solar-blind AlGaN Schottky and PIN UV photodiode have been successfully demonstrated on MOCVD-grown i-Al_(0.33)Ga_(0.67)N/AlN/n-GaN and p-Al_(0.45)Ga_(0.55)N/i-Al_(0.45)Ga_(0.55)N/n -Al_(0.65)Ga_(0.35)N hetero-structure.The result shows that good Schottky diode is formed on Au/i-Al_(0.33)Ga_(0.67)N,response wavelength of detector changes from 250nm to 290nm with the peak responsivity of 0.08A/W.Response wavelength of PIN UV detector changes from 230nm to 275nm with the peak responsivity of 0.02A/W. |
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| Keywords: | PIN |
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