MOS capacitors with metal gate/high-k dielectrics on GaAs bulk substrate |
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| Authors: | V Budhraja X Wang D Misra |
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| Affiliation: | (1) Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102, USA;(2) Department of Electrical and Computer Engineering, Villanova University, Villanova, PA 19085, USA; |
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| Abstract: | This paper investigates the electrical characteristics at low temperatures through C–V, I–V and conductance measurements to
understand the interface behavior of HfO2 and p-type GaAs bulk substrate. Room temperature interface state density, D
it
, estimated for as-deposited Ti–Au/HfO2/GaAs capacitors was found to be 3.68 × 1011 cm−2 eV−1. Low temperature measurement suggests that only fast interface states contribute to the conduction process. When the characteristics
of two different metal gates were compared, the accumulation capacitance density observed to be 1.4 and 8.98 fF/μm2 for Be–Au/HfO2/GaAs and Ti–Au/HfO2/GaAs, respectively at 1 MHz. |
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