GaInP薄膜KMC生长并行计算模拟与可视化研究

以金属有机化学气相沉积(MOCVD)技术在GaAs衬底上生长GaInP太阳电池薄膜材料为对象,将MOCVD反应室内气体热流场CFD数值模拟的结果作为生长参数,运用动力学蒙特卡罗(KMC)方法对GaInP薄膜生长过程进行了并行计算模拟,给出了数据分布方式和通信优化策略进行负载平衡并降低通信开销,实现了真实沉积条件下基于大规模粒子的薄膜生长仿真,解决了单机计算能力的不足,缩短了仿真计算时间。模拟结果与试验一致性较好,为优化MOCVD生长GaInP薄膜的工艺参数提供理论依据,对于使用MOCVD生长高质量薄膜材料的太阳电池具有现实意义。

RESEARCH ON PARALLEL CALCULATION SIMULATION AND VISUALIZATION OF GaInP THIN FILM KMC GROWTH

In order to study the growth of GalnP solar cells thin film materials on GaAs substrate by Metal Organic Chemical Vapor Deposition (MOCVD) , Computational Fluid Dynamics (CFD) numerical simulation data of gases' thermal and flow fields of MOCVD reaction chamber were used as growth parameters, and parallel calculation method was applied to simulation of the process of GalnP thin film grown based on Kinetic Monte Carlo (KMC) .The data distribution model and communication strategy were given in detail in the full paper in order to balance workload and reduce the cost of communication, which makes the parallel algorithm realize thin film growth simulation based on massive particles under the real deposition states, overcome the insufficiency of single processor's capacity and quickens the calculation time.This visualization results provide the optimizations of processing parameters which grow GalnP thin film by MOCVD with theoretical basis, and it has realistic meaning for growing high-quality thin film material Solar Cells by MOCVD.